Analysis of a Double Gate MOSHEMT for application in wireless communication

Abstract :- The rapid evolution of wireless communication technologies, specifically the deployment of wireless networks, demands innovative semiconductor devices to meet the stringent requirements for high-frequency operation, low power consumption, and enhanced data rates. In this context, Double-Gate Metal-Oxide- Semiconductor High-Electron-Mobility Transistors (MOSHEMTs) have emerged as a promising solution due to their unique combination of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and High-Electron- Mobility Transistor (HEMT) characteristics. This paper provides a comprehensive review of the design, and performance characteristics of Double-Gate MOSHEMTs tailored for wireless applications. The inclusion of the double-gate configuration allows for improved control over the Two-Dimensional Electron Gas (2DEG) formed at the semiconductor-oxide interface, leading to enhanced electron mobility and high frequency. All simulations were conducted using the Visual TCAD 2D simulator from Cogenda.