Author :- Abhilash Sahu, Ananya Dastidar, Tapas Kumar Patra
Affiliation :- School of Electronic Sciences
Odisha University of Technology and Research, Bhubaneswar
E-Mail:-adastidar@outr.ac.in
Keywords:- GaN, MOSHEMT, RF, HfO2, TCAD.
DOI :- Under Progress
Abstract:- This paper presents the findings of a simulation study focused on a dual-gate Metal-Oxide-Semiconductor High Electron Mobility Transistor (MOSHEMT) designed for high-speed applications. The device has a wide band Al0.83Ga0.17N layers and a narrowband GaN layers, with a high-κ HfO2 gate dielectric. The results of this study underscore the potential of AlGaN/GaN underlap dual Gate MOS-HEMTs for high-frequency and high-speed applications. The device exhibited promising results in terms of drain current, transconductance and cut-off frequency as 7 mA/mm, 3.5S/mm, and 1.51 THz, almost a 50% improvement over the existing work for cut-off frequency. All simulations were conducted using the Visual TCAD 2D simulator from Cogenda.